Simulation of Transport in Nanodevices

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Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity.

Täpsemad andmed
Vanusepiirang:
0+
Lisatud LitResi:
21 juuni 2018
Maht:
403 lk.
ISBN:
9781118761779
Kogusuurus:
13 MB
Lehekülgi kokku:
403
Lehekülje mõõdud:
156 x 234 мм
Toimetajad:
François Triozon, Philippe Dollfus
Kirjastaja:
Wiley
Copyright:
John Wiley & Sons Limited
"Simulation of Transport in Nanodevices" — loe veebis tasuta üht katkendit raamatust. Kirjutage kommentaare ja ülevaateid, hääletage oma lemmiku poolt.

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